Loading

Personal Profile

Yiyang Yuan (袁易扬)

Research Interests

Compute-In-Memory, Resistive Random Access Memory, Artificial Intelligence, Brain-Machine Interface

Education

Sep. 2021 - now : Institute of Microelectronics of the Chinese Academy of Sciences

  • Ph.D. in Microelectronics and Solid State Electronics

  • Advisor: Prof. Feng Zhang

Sep. 2017 - Jun. 2021: Beijing Institute of Technology

  • B.S. in Electronic Information Engineering

Publications

  • Yuan, Y.; Zhang, B.; Yang, Y.; Luo, Y.; Chen, Q.; Lv, S.; Wu, H.; Ma, C.; Li, M.; Yue, J. ; Xing, G.; Mak, P.; Li, X.; Zhang, F. "A 28nm 192.3TFLOPS/W Accurate/Approximate Dual-Mode Transpose Digital 6T-SRAM CIM Macro for Floating-Point Edge Training and Inference", International Solid State Circuit Conference(ISSCC), 2025, 14.5;

  • Zhu, J.; Yuan, Y.; Nie, L.; Tang, W.; Li, M; Wu, H.; Zhao, X.; Xing, G.; Zhang, F. "A 28nm 75.6KOPS 13nJ Computing-in-Memory Pipeline Number Theoretic Transform Accelerator for PQC", DOI: 10.1109/TCSII.2024.3481996

  • Wu, H.; Cheng, Y. ; Yuan, Y.; Yue, J.; Li, X.; Wang, X.; Zhang, F. "A 28-nm 19.9-to-258.5-TOPS/W 8b Digital Computing-in-Memory Processor With Two-Cycle Macro Featuring Winograd-Domain Convolution and Macro-Level Parallel Dual-Side Sparsity," in IEEE Journal of Solid-State Circuits, DOI: 10.1109/JSSC.2024.3409356.

  • Yuan, Y.; Yang, Y.; Wang, X.; Li, X.; Ma, C.; Chen, Q.; Tang, M.; Wei, X.; Hou, Z.; Zhu, J.; Wu, H.; Ren, Q.; Xing, G.; Mak, P.; Zhang, F. "A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC", International Solid State Circuit Conference(ISSCC), 2024, 34.6; DOI: 10.1109/ISSCC49657.2024.10454313.

  • Wu. H. ; Cheng, Y. ; Yuan, Y.; Yue, J.; Fu, X. Ren, Q.; Luo, Q.; Mak, P.; Wang, X.; Zhang, F. "A 28-nm Computing-in-Memory-Based Super-Resolution Accelerator Incorporating Macro-Level Pipeline and Texture/Algebraic Sparsity", in IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, DOI: 10.1109/TCSI.2023.3325850

  • Huo, Q.; Yang, Y.; Wang, Y.; Lei, D.; Fu, X.; Ren, Q.; Xu, X.; Qing, L.; Xing, G.; Chen, C.; Si, X.; Wu, H.; Yuan Y.; Li, Q.; Li, X.; Wang, X.; Chang, M.; Zhang, F.; Liu M. "A computing-in-memory macro based on three-dimensional resistive random-access memory". Nat Electron 5, 469–477 (2022). DOI: 10.1038/s41928-022-00795-x

Honors and Awards

Contact

  • Address: 3 Beitucheng West Road, Chaoyang District, Beijing, PR China
  • Email: yuanyiyang@ime.ac.cn
posted @ 2022-09-21 20:18  sasasatori  阅读(2160)  评论(1编辑  收藏  举报