摘要: RF and Other Compact Model Applications In this chapter, we discuss some examples of new applications using BSIM3v3 in RF modeling, statistical modeli 阅读全文
posted @ 2017-01-11 13:42 秋水小战士 阅读(130) 评论(0) 推荐(0) 编辑
摘要: Model Parameter Extraction 提取 There are two different optimization strategies which can be used for parameter extraction: global optimization and loca 阅读全文
posted @ 2017-01-11 13:41 秋水小战士 阅读(177) 评论(0) 推荐(0) 编辑
摘要: Model Testing Requirements for a MOSFET Model in Circuit Simulation (1) It should include most or all of the important physical effects in modern MOSF 阅读全文
posted @ 2017-01-11 13:40 秋水小战士 阅读(187) 评论(0) 推荐(0) 编辑
摘要: BSIM3v3 Model Implementation The enhancement of the continuity and smoothness of the BSIM3v3 model equations has been discussed in Chapter 4. In this 阅读全文
posted @ 2017-01-11 13:37 秋水小战士 阅读(255) 评论(0) 推荐(0) 编辑
摘要: Non-quasi Static (NQS) Model An non-quasi-static (NQS) model is desirable in some mixed signal IC and radio frequency (RF) applications. For long chan 阅读全文
posted @ 2017-01-11 13:36 秋水小战士 阅读(131) 评论(0) 推荐(0) 编辑
摘要: Temperature Dependence Model A number of important model parameters such as mobility, threshold voltage, saturation velocity, parasitic series resista 阅读全文
posted @ 2017-01-11 13:35 秋水小战士 阅读(117) 评论(0) 推荐(0) 编辑
摘要: Source/Drain Parasitics Model 源漏寄生模型 Parasitic Components in a MOSFET the gate resistance Rg gate/source overlap capacitance Cgso gate/drain overlap c 阅读全文
posted @ 2017-01-11 13:34 秋水小战士 阅读(262) 评论(0) 推荐(0) 编辑
摘要: Noise Model Good noise models in circuit simulators are critical to analog and RF applications. Two types of noise, thermal and flicker, are important 阅读全文
posted @ 2017-01-11 13:32 秋水小战士 阅读(175) 评论(0) 推荐(0) 编辑
摘要: Substrate Current Model Impact ionization is the physical mechanism for the generation of substrate current. As the channel length of MOSFETs is reduc 阅读全文
posted @ 2017-01-11 13:30 秋水小战士 阅读(141) 评论(0) 推荐(0) 编辑
摘要: Capacitance model Depending on the magnitude of the time-varying voltages, the dynamic operation can be classified as large signal operation or small 阅读全文
posted @ 2017-01-11 13:27 秋水小战士 阅读(237) 评论(0) 推荐(0) 编辑
摘要: I-V model Channel charge and mobility, which are the two key factors influencing the I-V characteristics. The drift current components due to the elec 阅读全文
posted @ 2017-01-11 13:26 秋水小战士 阅读(149) 评论(0) 推荐(0) 编辑
摘要: Threshold voltage model Vth对器件操作有三种操作区: Vg>>Vth in strong inversion region, drift current is dominant. Vg<<Vth in weak inversion region, diffusion cur 阅读全文
posted @ 2017-01-11 13:24 秋水小战士 阅读(204) 评论(0) 推荐(0) 编辑
摘要: Normal short channel effects The threshold voltage of a long channel device is independent of the channel length L and the drain voltage Vd . Vth decr 阅读全文
posted @ 2017-01-11 13:09 秋水小战士 阅读(1113) 评论(0) 推荐(0) 编辑
摘要: ACCT 在输出列表的最后报告工作的计量和运行时间的统计。仿真的效率取决于输出点对整个重复次数的比率。报告自动完成,如果你不禁止它。ACCT的选择是: 0 禁止报告 1 开启报告(缺省) 2 开启MATRIX报告的统计 ARTIST=x ARTIST=2开启Cadence Analog Artist 阅读全文
posted @ 2017-01-11 13:02 秋水小战士 阅读(1812) 评论(0) 推荐(0) 编辑
摘要: BSIM4.3.0 Model Selectors/Controllers LEVEL SPICE3 model selector VERSION Model version BINUNIT Binning unitr PARAMCHK Switch for parameter value chec 阅读全文
posted @ 2017-01-11 13:00 秋水小战士 阅读(1264) 评论(0) 推荐(0) 编辑