方正微 2007-2014 roadmap
Road Map for FMIC Process | |||||
CMOS Logic&Mixed Mode(逻辑与混合) | BCD/Analog/ Bipolar (BCD /模拟/双极) | Power MOSFET/IGBT(功率器件IGBT) | |||
MEMS/Memory/Others(MEMS/储存和其他) | |||||
Si-GATE CMOS | 0.35um SPTM 1.5V | MG | 2.0um NPSM 1.5V/5V | Planar DMOS | 2.0um Planar DMOS 600V |
0.35um SPDM 5V | 2.25um NPSM 1.5V/3V | 1.0um Planar DMOS 500-650V | |||
0.4um SPSM Flatcell | 2.5um NPSM 3V/5V | 1.0um Planar DMOS(Shrink) 200-800V | |||
0.40 um Embedded Flash | 6.0um NPSM 18V | Trench DMOS | 0.4um Trench DMOS 20-75V | ||
0.5um SPSM 1.5v 5V | 6.0um NPSM 24V | 0.4um Trench DMOS 100V | |||
0.5um DPSM 5V | 2.0um Metal Gate 5V | 0.4um Trench DMOS(ESD) 20V | |||
0.5um SPDM 5V | 6um Metal Gate 30V | 0.4um Trench DMOS(P) 20-30V | |||
0.5um DPDM 40V | 2.5um Metal Gate 5V | 0.4um Trench 20-75V DMOS | |||
0.5um OTP | BCDMOS BiCMOS | 800V CDMOS | 0.4um Trench DMOS PCH 60-100V | ||
0.6um SPSM 5V | 0.4u Trench DMOS(P) 60V | ||||
0.6um SPDM 5V | 1.0um BCD 700V | Trench SBD | |||
0.6um DPSM/DM 5V | 1.5um 1P2M BCD 30V | ||||
0.8um SPSM 5V | 1.0um 1P2M BCD 30V | ||||
0.8um SPDM 5V | 3.0um BCD 700V | ||||
0.8um Mixed Mode | 1.5um 1P2M BCD 30V | ||||
1.0um 1P2M BCD 30V | |||||
0.5um 1P1M 5V | 1.0um 1P2M 40V | ||||
2.25um Metal Gate 5V | 0.8um BCD 20V | MOS SBD | |||
0.6um 1P1M 5V | 1.0um BCD 700V | ||||
0.8um 1P2M 5V | 0.4um Trench PCH 20-30V | ||||
0.6um 2P2M 5V/18V | |||||
0.6um 1P2M 5V | 1.0µm 700V BiCMOS | ||||
0.5um 1P1M 1.5V | 0.5µm 20-60V BiCMOS | ||||
0.35um 1P3M 1.5V | 1.0µm 5-30V BiCMOS | ||||
0.5um Mixed Mode | IGBT | 600-1200V | |||
0.35um 1P2M 5V | IGBT 1000-1200V | ||||
0.5 um 2P2M 40V | Bipolar | 1.0um Bipolar 24V/40V | IGBT 600-1000V | ||
0.5um 1P2M 5V | MEMS | 0.4um Flat cell 1P1M 5V | |||
0.8umMixed Mode | 0.5um 120V Schottky | 0.5um Trench 45-120V | |||
0.8/1.0um 2P2M 40V | 0.5um OTP | ||||
0.5um 2P1M 5V | 0.5um 45-100V Schottky | ||||
MEMS | JFET | ||||
0.40 umEmbedded Flash | TVS | ||||
GaNenhanced MOSFET | |||||
HV CMOS | 0.8/1.0um 2P2M 40V |