AMR Current Sensor && MLX91206非接触电流传感器
各向异性磁阻(Anisotropic Magneto Resistive)
anisotropic magnetoresistive sensor
E524.50 Integrated AMR Current Sensor
The E524.50 current sensor family is designed for highly dynamic electronic measurements of DC, AC, or pulsed currents with integrated galvanic isolation. This current sensor based on the an-isotropic magneto-resistive effect (AMR) enables excellent dynamic response without a hysteresis present in designs using iron-cores. The primary current measured needs to be fed below the sensor on PCB or in a current rail, usually a U-shaped conductor defining the magnetic field gradient.
The sensor device includes a high-precision signal conditioner IC providing internal feedback of a sensor compensation current for optimum linearity. The IC-output is an offset calibrated and pre-scaled current which is proportional to the primary current measured. This output is easily converted to a voltage with an external resistor at the post-processing device (usually ADC or amplifier). A precise on-chip voltage reference is provided. Alternatively, an external reference can be used. Total accuracy of a multi-sensor system is improved by sharing one voltage reference for all sensors. A fast overcurrent alarm output allows for immediate reaction to overload events independent of processor and software.
More Information
Features
Contactless current measurement based on AMR-effect
High precision sensor readout using closed-loop amplifier system
High bandwidth measurement: DC to 500kHz
Analog current output, used with external feedback resistor for
Over-current alarm output with tunable threshold
Applications
Power inverters
Electrical motor controls
Switch mode power supplies
http://www.elmos.com/chinese/produkte/sensor/current.html?tx_pmproductlist_productlist%5Bproduct%5D=71&tx_pmproductlist_productlist%5Baction%5D=showProduct&tx_pmproductlist_productlist%5Bcontroller%5D=Product&cHash=34c8f6ae7a7a6d2927f29c5f40ebaf3b
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新型的非接触式电流传感器MLX91206由CMOS霍尔集成电路以及淀积在表面的集磁片(IMC)构成。其中 集磁片是一层很薄的软磁材料，可以将磁场聚集起来，因此增大磁场强度，提高了信噪比。芯片尤其适用于直流和/或交流电流的检测，最高频率可达90kHz， 可以达到电隔离、低植入损耗、较短的反应时间、小封装尺寸和低封装成本。
