DRAM几个关键的参数
摘要：
1、tRCDActive to Read/Write command delay; RCD 为 Row Command Delay的缩写，描述的是一个Row被Active之后，数据从DRAM cell到Sense Amp的时间。2、tCASthe delay time between the moment a memory controller tells the memory module to access a particular memory column on a memory module, and the moment the data from given array loca 阅读全文
posted @ 2012-07-11 17:59 freshair_cn 阅读(2654) 评论(0) 推荐(0) 编辑
