SDRAM_Init初始化【 记录备忘】

 

?

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64

//宏定义<br>#define BANK                     ((uint32_t)2)   #define BUSRT_LENGTH_1           ((uint16_t)0x0000) #define BUSRT_LENGTH_2           ((uint16_t)0x0001) #define BUSRT_LENGTH_4           ((uint16_t)0x0002) #define BUSRT_LENGTH_8           ((uint16_t)0x0003) #define BUSRT_LENGTH_FULLPAGE    ((uint16_t)0x0007)   #define BUSRT_TYPE_SEQUENTIAL    ((uint16_t)0x0000) #define BUSRT_TYPE_INTERLEAVED   ((uint16_t)0x0008)   #define LATENCY_MODE_CAS_2       ((uint16_t)0x0020) #define LATENCY_MODE_CAS_3       ((uint16_t)0x0030)   #define OPERATING_MODE           ((uint16_t)0x0000)   #define WRITE_BURST_PROGRAMME    ((uint16_t)0x0000) #define WRITE_BURST_SINGLE       ((uint16_t)0x0200)   #define REFRESH_RATE             ((uint32_t)1600)<br><br>//部分初始化<br>  hsdram1.Instance = FMC_SDRAM_DEVICE;<br>  /* hsdram1.Init */<br>  hsdram1.Init.SDBank = FMC_SDRAM_BANK2;<br>  hsdram1.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_9;<br>  hsdram1.Init.RowBitsNumber = FMC_SDRAM_ROW_BITS_NUM_12;<br>  hsdram1.Init.MemoryDataWidth = FMC_SDRAM_MEM_BUS_WIDTH_16;<br>  hsdram1.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4;<br>  hsdram1.Init.CASLatency = FMC_SDRAM_CAS_LATENCY_2;<br>  hsdram1.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE;<br>  hsdram1.Init.SDClockPeriod = FMC_SDRAM_CLOCK_PERIOD_2;<br>  hsdram1.Init.ReadBurst = FMC_SDRAM_RBURST_DISABLE;<br>  hsdram1.Init.ReadPipeDelay = FMC_SDRAM_RPIPE_DELAY_1;<br>  /* SdramTiming */<br>  SdramTiming.LoadToActiveDelay = 2;<br>  SdramTiming.ExitSelfRefreshDelay = 8;<br>  SdramTiming.SelfRefreshTime = 5;<br>  SdramTiming.RowCycleDelay = 6;<br>  SdramTiming.WriteRecoveryTime = 3;<br>  SdramTiming.RPDelay = 2;<br>  SdramTiming.RCDDelay = 2; <br><br>static int SendCommand(uint32_t CommandMode, uint32_t Bank, uint32_t RefreshNum, uint32_t RegVal) //发送命令函数 {     uint32_t CommandTarget;     FMC_SDRAM_CommandTypeDef Command;       if(Bank == 1)   //bank选择     {         CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1;     }     if(Bank == 2)     {         CommandTarget = FMC_SDRAM_CMD_TARGET_BANK2;     }       Command.CommandMode = CommandMode;  //command     Command.CommandTarget = CommandTarget;  //SDRAM bank1/2     Command.AutoRefreshNumber = RefreshNum;   //连续发出的自动刷新命令数     Command.ModeRegisterDefinition = RegVal;       if(HAL_SDRAM_SendCommand(&hsdram1, &Command, 0x1000) != HAL_OK)     {         return -1;     }     return 0; }   void SDRAM_Init()  //初始化 {     uint32_t temp;       SendCommand(FMC_SDRAM_CMD_CLK_ENABLE, BANK, 1, 0);  //Start clock       HAL_Delay(1);  //At least 100 us       SendCommand(FMC_SDRAM_CMD_PALL, BANK, 1, 0);   //FMC SDRAM Command Mode       SendCommand(FMC_SDRAM_CMD_AUTOREFRESH_MODE, BANK, 1, 0);       temp = (uint32_t)(BUSRT_LENGTH_1 | BUSRT_TYPE_SEQUENTIAL | LATENCY_MODE_CAS_2 |             OPERATING_MODE | WRITE_BURST_PROGRAMME);     SendCommand(FMC_SDRAM_CMD_LOAD_MODE, BANK, 1, temp);       HAL_SDRAM_ProgramRefreshRate(&hsdram1, REFRESH_RATE); }

 硬件参数配置（IS42/45S81600F）根据SDRAM的datasheet设置